PATENT:
SIC MICROMACHINING:
ITALIAN PATENTED PROCESS N1363498; 06.07.2009
METHOD FOR MICROMACHINING THE SILICON CARBIDE SUBSTRATE OF A SEMICONDUCTOR DEVICE
RF MEMS
ITALIAN INDUSTRIAL PATENT N 1403068; 04.10.2013
METHOD TO PRODUCE A MICROELECTROMECHANICAL DEVICE WITH A METALLIC SUSPENDED BEAM
Proceedings and Publications
Proceeding SPIE 5836, Smart Sensors, Actuators, and MEMS II, 686 (July 1, 2005
Microhotplate-based silicon gas sensor arrays with linear temperature gradient for wine quality monitoring, Adami A., Lorenzelli L., Guarnieri V., Francioso L., Forleo A., Agnusdei G., Taurino A.M., Siciliano P., Zen M)
Abstract A WO3-based gas sensor array with linear temperature gradient for wine quality monitoring, Adami A., Lorenzelli L., Guarnieri V., Francioso L., Forleo A., Agnusdei G., Taurino A.M., Siciliano P
In this work, we describe the design implementation, validated by experimental results, of an innovative gas sensor array for wine quality monitoring. The main innovation of this integrated array deals with the simultaneous outputs, from a single chip on TO-12 socket, of 8 different signals coming from a WO3 thin film structure heated in a linear temperature gradient mode, allowing an overall evaluation of gas sensing properties of the material in a 100C-wide window, typically from 300 to 400C. The implemented sensitive layer is a WO3 film deposed by RF-sputtering. Preliminary tests of gas sensing showed good responses to the target analytes for the specific application (1-heptanol, 3-methyl butanol, benzaldehyde and ethyl-hexanoate).
Abstract Linear temperature microhotplate gas sensor array for automotive cabin air quality monitoring, Francioso L., Forleo A., Agnusdei G., Taurino A.M., Adami A., Lorenzelli L., Guarnieri V., Siciliano P.
The present work describes the experimental evaluation of an innovative gas sensor array for automotive cabin air quality applications. This integrated array presents as a main innovation aspect the simultaneous outputs, from a single chip packaged onto TO-12 socket, of eight different signals coming from a WO3 thin film structure heated in a linear temperature gradient mode, allowing an overall evaluation of gas sensing properties of metal oxide materials in a 100 C-wide window, typically from 300 to 400 C. Experimental results will be explained by means of PCA (principal component analysis) compounds identification for three different target gases of CO, NO2 and SO2 at different concentrations.
Proceedings of “III Symposium on advanced technologies, use and applications”
GaN HEMT devices: State of the art and roadmap of the KORRIGAN project, M. Peroni, C. Lanzieri, A. Cetronio, A. Passaseo, L. Mariucci, E. Limiti, G. Ghione, E. Zanoni, M. Topi, A. Chini, G. Melone, L. Iacobelli, F. Quaranta Abstract
RF-MEMS represent a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch respect to solid state technologies. In this paper we demonstrate the possibility to fully integrate the process fabrication of RF-MEMS switches in the GaN-HEMT manufacturing steps to develop a RF-MEMS/MMIC prototype. MEMS RF performance reveals an insertion loss and an isolation respectively better than 0.6 dB and 25 dB in the frequency range 5-50 GHz. Moreover the coexisting HEMT devices show a fmax=40 GHz and 6.5 W/mm density power, demonstrating the integration achievability.
New Fabrication Process to Manufacture RF-MEMS and HEMT on GaN/Si Substrate, F. Crispoldi, A. Pantellini, S. Lavanga, A. Nanni, P. Romanini, L. Rizzi, P. Farinelli, and C. Lanzieri, European Microwave Week 2009 – EuMIC 2009
A novel manufacturing technology for RF MEMS devices: design, fabrication, testing & packaging, G. Melone, A. Quirini, L. Rizzi, C. Liberace, V. Schirosi, International MEMS/MST Industry Forum 6 October2009 Dresden, Germany In conjunction with SEMICON Europa 2009
RF MEMS manufacturing chain in OPTEL: design (multiphysics and electromagnetic simulations), fabrication (surface-micromachining technology, photolitography levels, substrate-independent technology), testing (static and dynamic DC testing, RF testing, ageing and endurance testing), packaging (PCB as an interface between RF MEMS devices and DC/RF testing board).
Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate, F. Crispoldi, A. Pantellini, S. Lavanga, A. Nanni, P. Romanini, L. Rizzi, P. Farinelli, C. Lanzieri
Abstract
Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to solid state technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer.
A Novel Manufacturing Technology for RF MEMS Devices on Ceramic Substrates , V. Schirosi,G. Del Re,L. Ferrari,P. Caliandro,L. Rizzi, G. Melone
Abstract
Microelectromechanical systems are often used for their enormous capability and good qualities in T/R modules especially for space modular applications. High isolation and very low insertion loss are guaranteed by their intrinsic working principle. This is a very robust, flexible, and low-cost technology, and it provides high reliability, good reproducibility, and complete fulfillment of technical requirements.
A New Methodology For In-Situ Residual Stress Measurement In MEMS Structures , M. Sebastiani, E. Bemporad, G. Melone, L. Rizzi, A. M. Korsunsky
Abstract
In this paper, a new approach is presented for local residual stress measurement in MEMS structures. The newly proposed approach involves incremental focused ion beam (FIB) milling of annular trenches at material surface, combined with high resolution SEM imaging and Digital Image Correlation (DIC) analysis for the measurement of the strain relief over the surface of the remaining central pillar. The proposed technique allows investigating the average residual stress on suspended micro-structures, with a spatial resolution lower than 1 ?m. Results are presented for residual stress measurement on double clamped micro-beams, whose layers are obtained by DC-sputtering (PVD) deposition. Residual stresses were also independently measured by the conventional curvature method (Stoneys equation) on a similar homogeneous coating obtained by the same deposition parameters and a comparison and discussion of obtained results is performed.
An X-Band reconfigurable RF MEMS reflect-line phase-shifter, Vincenzo Schirosi, Giampiero Del Re, Luca Ferrari, Pierangela Caliandro, Leonardo Rizzi, Giovanni Melone, European Microwave Week 2010 – EuMIC 2010
Abstract
RF MEMS technology allows fabrication of very interesting devices for switching of Radio Frequency signals. This technology allows to reduce number of connections, to reduce drastically device dimensions, to operate with signals in large bandwidth, from 0 to 50 GHz with consistent performances. So, monolithical integration allows to create complex devices as phase shifters, tunable filters, step delay modules, couplers, etc.